| PART |
Description |
Maker |
| WSF512K16-72H2IA WSF512K16-72H2M WSF512K16-72H2MA |
512KX16 SRAM/FLASH MODULE, SMD 5962-96901
|
WEDC[White Electronic Designs Corporation]
|
| ACT-SF2816N-39F18C ACT-SF2816N-39F18I ACT-SF2816N- |
ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module
|
http://
|
| DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 D |
2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16K Nonovolatile SRAM
From old datasheet system
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
http://
|
| WED2ZL361MSJ-BC WED2ZL361MSJ26BI WED2ZL361MSJ42BC |
NBL SSRAM MCP
1M X 36 MULTI DEVICE SRAM MODULE, 2.6 ns, PBGA119
1M X 36 MULTI DEVICE SRAM MODULE, 4.2 ns, PBGA119
|
WHITE ELECTRONIC DESIGNS CORP
|
| WSF512K16-70H2C WSF512K16-90G2C WSF512K16-90H2C |
512KX16 SRAM/FLASH MODULE, SMD 5962-96901 512KX16的SRAM /闪存盘，贴片5962-96901
|
Electronic Theatre Controls, Inc.
|
| DS1250Y-100 DS1250Y-70 DS1250ABP- DS1250YP-70-IND |
512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DIP32
GT 6C 2#8 4#16 PIN PLUG
4096k Nonvolatile SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
4096k Nonvolatile SRAM 4096k非易失SRAM
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
Maxim Integrated Products, Inc.
|
| AM50DLI28BG AM50DL128BG |
Am50DL128BG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am50DL128BG -堆叠式多芯片封装（MCP）闪存和SRAM
|
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| WSF512K16-XG2X WSF512K16-39H2C WSF512K16-39H2M |
SRAM/Flash MCP
SRAM/EEPROM 的SRAM / EEPROM
|
Electronic Theatre Controls, Inc.
|
| DS1220 DS1220AB DS1220AB-100-IND DS1220AB-120-IND |
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16k Nonvolatile SRAM 16K的非易失SRAM
M39012 MIL RF CONNECTOR 16K的非易失SRAM
|
Maxim Integrated Products, Inc.
HIROSE ELECTRIC Co., Ltd.
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
